Tag archive: ball grid array

The launch of Samsung's new 72Mb SRAM device marks it as the world's highest-capacity SRAM to date. The device simultaneously processes up to four different data streams and has double the capacity of the currently available 36Mb QDR II. The 72Mb QDR II SRAM operates at 300 megahertz (MHz), or up to 20 percent faster than the conventional QDR II, resulting in added performance for network applications. The new device processes… Read More

Samsung developed the DDR2 SDRAM using an advanced 80nm process technology, overcoming the industry expectations that 2Gb DRAM manufacture would require sub 65nm circuitry. The new DRAM technology breakthroughs include a 3-D transistor technology, recess channel array transistor (RCAT), and a new concept architecture process. First introduced 2003, RCAT is a technology unique to Samsung that reduces transistor area space by implementing a… Read More

From VIA's press release: VIA Technologies, Inc, and Yamashita System, Co. Ltd. today announced the AS-1210, the world's first lead-free mainboard based on the award winning VIA Eden Platform. A leading proponent of “Green Computing”, VIA continues to spearhead the drive for environmentally friendly computing by emphasizing power efficiency and ergonomics, and through the early adoption of manufacturing… Read More