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Tag Archive: DRAM

Hynix Reports First Net Profit in 2 Years on Chips

good-memory-hynixHynix Semiconductor Inc. recorded its first quarterly net profit in two years as prices for memory chips rose in a rapidly recovering market.

The company said in a regulatory filing it earned 246.28 billion won ($207.25 million) in the three months ended Sept. 30. It posted a net loss of 1.67 trillion won a year earlier. The profit ended seven straight quarters of losses.

Icheon, South Korea-based Hynix said third quarter sales rose 15 percent to 2.12 trillion won from 1.84 trillion won the year before.

Hynix attributed the results to a “faster than expected market recovery.” The company said average selling prices for DRAM, or dynamic random access memory chips, increased 26 percent from the previous quarter. Prices for NAND flash memory chips rose 4 percent.

Hynix is the world’s second-largest manufacturer of DRAM chips, used mostly in personal computers, and ranks No. 3 in NAND, used in digital devices such as cameras and music players.

“The memory market seems to have emerged from a long downturn,” Kim Min-chul, Hynix’s chief financial officer, told analysts on a conference call. “Seasonal demand for memory products was stronger than expected,” he said.

The highly cyclical memory chip industry has suffered due to chronic oversupply. German memory-chip maker Qimonda AG declared bankruptcy in January.

A rebound, however, has been gaining steam.

Memory Maker Qimonda Declares Bankruptcy

Memory Maker Qimonda Declares Bankruptcy

DRAM menufacturer Qimonda has filed for bankrupcty protection in a local court in Munich, Germany, after a bailout financing deal between Qimonda’s parent company, Infineon, a Portuguese investment firm, and the German state of Saxony failed to come through. Qimonda is the first DRAM manufacturer forced to seek bankruptcy protection in the recent global economic downturn; the company has also been hit hard by a worldwide glut in memory products that kept prices for RAM near (or even below) the costs of manufacturing DRAM for most of 2008.

Samsung Exec Pleads Guilty in DRAM Case

The ongoing investigation into price fixing in the market for dynamic random access memory (DRAM) has chalked up another victory, as Young Hwan Park, president of Samsung’s U.S. subsidiary pleads guilty to violations of the Sherman antitrust act for having conspired to fix prices and eliminate competition in the DRAM market.

To date, 18 individuals and four companies have been charges in the U.S. Department of Justice’s probe into the DRAM market. So far, more than $730 million in criminal fines have been assessed in the case, making it the second-largest price-fixing case in U.S. history.

Samsung Pleads Guilty to RAM Price Fixing

Korean electronics manufacturer Samsung Electronics and its U.S. subsidiary Samsung Semiconductor, Inc., have agreed to plead guilty to charges it conspired with fellow chipmakers to fix prices from DRAM (computer memory) from 1999 to 2002, thereby cheating consumers who were forced to pay artificially inflated prices for computers and other technology. The company will also pay a $300 million fine, the largest criminal fine levied by the Justice Department since 1999, and the second largest in U.S. history.

Samsung Memory Increases Cell Phone Power

Samsung has completed the world’s first working prototype of a 512Mb mobile DRAM device that operates up to 333Mbps, transmitting 32 bits of data simultaneously. This memory chip is fast enough tosupport high-quality 3D graphics and streaming video in next-generation mobile phones, PDAs, portable scanners and other handheld products.

Two of the new 512Mb mobile DRAMs can be stacked together to provide a one-gigabit memory capacity, opening up new possibilities for mobile storage.

Powered by just 1.8 volts, the high-bandwidth Samsung chip is available in double data rate (DDR) and synchronous DRAM (SDRAM) formats to work with as many data transmission systems as possible. Samsung also will develop versions of the 512Mb mobile memory for its multi-chip packages (MCPs) and system-in-a-package (SIP) devices.

Elpida Begins Production Of DDR2

Japan’s leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it will begin mass production of DDR2 SDRAM using advanced 0.10-micron process technology in August 2004.Elpida Memory’s first products slated for manufacturing utilizing 0.10-micron process technology include high-performance, high-density DRAM products such as DDR2-533 and DDR2-667.

“Elpida strives to offer the industry stable production of high-performance DRAM products,” said Yukio Sakamoto, president of Elpida Memory. “Our ability to mass manufacture 0.10-micron DRAM enables us to meet increased demand for advanced DDR2 SDRAM as the industry transitions from DDR to DDR2 architecture.”

Elpida Expands DRAM For Consumer Devices

From Elpida’s press release:

Elpida Memory, Inc (Elpida), Japan’s leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it now offers an expanded line of 0.11-micron, high-speed consumer DRAM devices for use in digital consumer applications. The devices are offered in 64 Megabit, 128 Megabit and 256 Megabit densities with 16-bit and 32-bit organizations and are available in TSOP, FBGA and Low-Profile Quad Flat Packages (LQFP) to satisfy growing market demand for memory products in multiple density and package options. The devices target digital consumer electronics applications that are now using DRAM for the first time, or that have a need for higher density DRAM than ever before. These applications include digital cameras, digital TVs, hard disk drive (HDD) recorders and personal video recorders.

Infineon May Reduce DDR Output This Month

Infineon explained that its DRAM output would drop due to production reallocation, but declined to comment on the actual amount. The company’s German headquarters gave three main reasons why DRAM output would drop in April: 1. Output in February and March has been 10-20% more than normal. 2. Infineon plans to allocate some of its DRAM capacity to logic IC production in the company’s fiscal third quarter (ends June 30). 3. Infineon also plans to maintain low DRAM inventory levels in the same quarter.

Read more at DigiTimes.

Micron Heads Back Into The Black

But the revenue line and the fact that Micron, is back in the black, shows that the DRAM market is picking up at long last. Compare and contrast with Q1 last year, when the company, America’s last DRAM maker, produced a net loss of $315.9m on sales of $685.1m.

And the market will stay picked up in the medium term, according to IDC, which is forecasting industry revenue increases in 2004 and 2005. And then in 2006, as is the way of the memory market, over-production will see revenue falls once more.

Intel to invest $100 mill in Elpida Memory

Elpida Memory plans to use the proceeds from this proposed investment and other intended financing to significantly boost production at its 300-mm, sub-0.11 micron DRAM wafer fabrication plant in Hiroshima, Japan. Assuming timely satisfaction of all closing conditions, including satisfactory completion of due diligence, receipt of necessary internal and regulatory approvals and achievement of a substantial additional funding amount from other investors, the parties anticipate closing the Intel investment in coordination with the closing of the additional financing that Elpida intends to raise later this year.

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