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Elpida Announces 1GB Notebook DDR Module

From Elpida’s press release:

Elpida Memory, Inc (Elpida), Japan’s leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it has shipped the first 1 Gigabyte DDR2 small-outline dual in-line memory module (SO-DIMM) that brings low-power, high-density, high-performance and small form-factor benefits to notebook PC applications. Separately, Elpida has also shipped samples of its 256 Megabit DDR2 SDRAM device that will be utilized in server and desktop applications requiring lower density modules. Elpida’s extensive DDR2 product line will be displayed this week at the Intel Developer Forum, February 17-19, 2004.

“DDR2 is by far the most advanced industry-standard architecture for main memory applications including notebooks, desktops, workstations and servers,” said Jun Kitano, director of Technical Marketing at Elpida Memory (USA). “Elpida’s new 1 Gigabyte SO-DIMM extends DDR2 architecture benefits such as high-density, high-speed-performance and low power consumption to notebook applications. Our customers can now select the optimum density device or module for their next-generation processor-based systems.”

Elpida’s comprehensive DDR2 product portfolio now includes devices in 256 Megabit, 512 Megabit and 1 Gigabit densities. In addition to the new 1 Gigabyte SO-DIMM, Elpida also offers unbuffered modules in 512 Megabyte and 1 Gigabyte densities, and registered modules in 512 Megabyte, 1 Gigabyte and 2 Gigabyte densities. All modules are based on 512 Megabit DDR2 SDRAM devices.

1 Gigabyte DDR2 SO-DIMM Features
Elpida’s new 1 Gigabyte SO-DIMMs (Part numbers: EBE11UD8ABDA-5x-E; EBE11UD8ABDA-4x-E) are composed of sixteen 512 Megabit DDR2 devices stacked and mounted on the modules using Elpida’s innovative stacked FBGA technology (sFBGA). They are organized as 128M words x 64-bits x 2 ranks and offer data transfer rates of up to 533 Megabits per second (Mbps), and they are JEDEC-standard 200-pin with a 3.8 millimeter (mm) thickness. The mounted DDR2 devices (previously announced in May 2003) are built using Elpida’s 0.11 micron process technology and have a 1.8V operation with a burst length of 4, 8 and a CAS Latency (CL) of 3, 4, 5. The DDR2 devices provide a 50% power savings over the previous generation DDR architecture, and they incorporate Off-Chip-Driver (OCD) and On-Die Termination (ODT) for improved signal quality.

256 Megabit DDR2 SDRAM Features
Elpida’s new 256 Megabit DDR2 devices (Part numbers: EDE2504AASE-5x/4x-E; EDE2508AASE-5x/4x-E; EDE2516AASE-5x/4x-E) are organized as 64M/32M/16M words x 4-/8-/16-bits, respectively. The new devices are built using Elpida’s 0.11 micron process technology and operate at up to 533 Megabits per second (Mbps). They are available in 64- or 84-ball FBGA packages with a CAS Latency (CL) of 3, 4, 5, a burst length of 4, 8 and low, 1.8V operation. The 256 Megabit devices will form the basis for Elpida’s 256 Megabyte and 512 Megabyte registered DIMMs for servers, as well as for 256 Megabyte SO-DIMMs for notebooks. The devices can also be used in the growing number of digital consumer products that are turning to DRAM for its density and performance.

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